Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
Lee, I. H.
Baek, J. H.
Demir, H. V.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/13464
Applied Physics Letters
American Institute of Physics.
Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.
Sari, E., Nizamoglu, S., Lee, I. H., Baek, J. H., & Demir, H. V. (2009). Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields. Applied Physics Letters, 94(21), 211107.