Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Lisesivdin, S. B.
Caliskan, M. D.
Journal of Applied Physics
American Institute of Physics
Lisesivdin, S. B., Balkan, N., Makarovsky, O., Patane, A., Yildiz, A., Caliskan, M. D., ... & Ozbay, E. (2009). Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures. Journal of Applied Physics, 105(9), 093701.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/13461
This work describes Shubnikov-de Haas (SdH) measurements in Al(0.22)Ga(0.78)N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures. (C) 2009 American Institute of Physics.