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dc.contributor.authorAltuntas, H.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2015/07/28en_US
dc.date.accessioned2015-07-28T12:04:51Z
dc.date.available2015-07-28T12:04:51Z
dc.date.issued2014-01-18en_US
dc.identifier.citationAltuntas, H., Donmez, I., Ozgit Akgun, C., & Biyikli, N. (2015). Electrical characteristics of B-GaN2O3 thin films grown by PEALD.en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://hdl.handle.net/11693/13170
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractIn this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (111) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O3 thin films were annealed under N-2 ambient at 600, 700, and 800 degrees C to obtain beta-phase. The structure and microstructure of the beta-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of beta-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/beta-Ga2O3/p-Si metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the beta-Ga2O3 thin films were annealed at 800 degrees C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (R-S), ideality factor (n), zero-bias barrier height (phi(Bo)), and interface states (N-SS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (E-SS-E-V) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (phi(e)), and R-S into account. Also using the Norde function and C-V technique, phi(e) values were calculated and cross-checked. Results show that beta-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and beta-Ga2O3 oxide layer. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Alloys and Compoundsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jallcom.2014.01.029en_US
dc.rightsCopyright © 2014 Elsevier B.V.en_US
dc.subjectAuthor Keywords:PEALD; Al/beta-Ga2O3/p-Si; Interface states; Metal-oxide-semiconductor KeyWords Plus:ATOMIC-LAYER DEPOSITION; CURRENT-VOLTAGE CHARACTERISTICS; SCHOTTKY-BARRIER DIODES; INTERFACE STATES; SERIES RESISTANCE; V CHARACTERISTICS; GA2O3 FILMS; I-V; C-V; TEMPERATUREen_US
dc.titleElectrical characteristics of B-GaN2O3 thin films grown by PEALDen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage190en_US
dc.citation.epage195en_US
dc.citation.volumeNumber593en_US
dc.instituteInstitute of Materials Science and Nanotechnologyen_US
dc.identifier.doi10.1016/j.jallcom.2014.01.029en_US
dc.publisherElsevieren_US


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