Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer
Author
El Atab, N.
Rizk, A.
Okyay, Ali Kemal
Nayfeh, A.
Date
2013-11-13Source Title
AIP Advances
Print ISSN
2158-3226
Publisher
AIP Publishing
Volume
3
Issue
11
Pages
112 - 116
Language
English
Type
ArticleItem Usage Stats
120
views
views
84
downloads
downloads
Abstract
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.
© 2013 Author(s)
Keywords
Programming VoltageRetention Time
Sonos Memory Cell
Trapping Layers
Trapping Levels
Tunnel Oxides