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      Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

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      Author(s)
      Zhang Z.-H.
      Liu W.
      Ju, Z.
      Tan S.T.
      Ji Y.
      Zhang X.
      Wang, L.
      Kyaw, Z.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2014
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing
      Volume
      104
      Issue
      25
      Pages
      251108-1 - 251108-4
      Language
      English
      Type
      Article
      Item Usage Stats
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      311
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      Abstract
      InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.
      Keywords
      Heterostructures
      Permalink
      http://hdl.handle.net/11693/12817
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4885421
      Collections
      • Department of Electrical and Electronics Engineering 4012
      • Department of Physics 2551
      • Institute of Materials Science and Nanotechnology (UNAM) 2260
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