A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation
IEEE Electron Device Letters
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Tekcan, B., Alkis, S., Alevli, M., Dietz, N., Ortac, B., Biyikli, N., & Okyay, A. K. (2014). A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation. Electron Device Letters, IEEE, 35(9), 936-938.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12758
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.