Double subband occupation of the two-dimensional electron gas in InxAl1− xN/AlN/ GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier
Lisesivdin, S. B.
Thin Solid Films
Lisesivdin, S. B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S., & Ozbay, E. (2010). Double subband occupation of the two-dimensional electron gas in In x Al 1− x N/AlN/GaN/AlN heterostructures with a low indium content (0.064≤ x≤ 0.140) barrier. Thin Solid Films, 518(19), 5572-5575.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11957
We present a carrier transport study on low indium content (0.064≤x≤0.140) InxAl1−xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33–300 K) and a magnetic field (0–1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a twodimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger–Poisson equations.