Selective-area high-quality germanium growth for monolithic integrated optoelectronics
Yu, H. Y.
Park, J H.
Okyay, A. K.
Saraswat, K. C.
IEEE Electron Device Letters
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Yu, H. Y., Park, J. H., Okyay, A. K., & Saraswat, K. C. (2012). Selective-area high-quality germanium growth for monolithic integrated optoelectronics. Electron Device Letters, IEEE, 33(4), 579-581.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11908
Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 107 cm−2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal–semiconductor–metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.