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      Quantum dot light-emitting diode with quantum dots inside the hole transporting layers

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      Author
      Leck K.S.
      Divayana, Y.
      Zhao, D.
      Young, X.
      Abiyasa, A. P.
      Mutlugun, E.
      Gao, Y.
      Liu, S.
      Tan S.T.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2013
      Source Title
      ACS Applied Materials and Interfaces
      Print ISSN
      1944-8244
      Publisher
      American Chemical Society
      Volume
      5
      Issue
      14
      Pages
      6535 - 6540
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
      Keywords
      Quantum Dots
      Hybrid Oleds
      Exciton
      Electroluminescence
      Hole Transport Layer
      Noninverted Structure
      Permalink
      http://hdl.handle.net/11693/11877
      Published Version (Please cite this version)
      http://dx.doi.org/10.1021/am400903c
      Collections
      • Department of Electrical and Electronics Engineering 3608
      • Department of Physics 2339
      • Institute of Materials Science and Nanotechnology (UNAM) 1854
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