Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers

doi:10.1021/am400903c

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Date Issued

2013

Author

Leck, K. S.

Divayana, Y.

Zhao, D.

Young, X.

Abiyasa, A. P.

Mutlugun, E.

Gao, Y.

Liu, S.

Tan, S. T.

Sun, X. W.

Demir, H. V.

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Please cite this item using this persistent URL

http://hdl.handle.net/11693/11877

Journal

ACS Applied Materials and Interfaces

Published as

http://dx.doi.org/10.1021/am400903c

Collections

Department of Physics [621]
Institute of Materials Science and Nanotechnology [306]
Department of Electrical and Electronics Engineering [978]

Publisher

American Chemical Society

Abstract

We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.

Citation

Leck, K. S., Divayana, Y., Zhao, D., Yang, X., Abiyasa, A. P., Mutlugun, E., ... & Demir, H. V. (2013). Quantum dot light-emitting diode with quantum dots inside the hole transporting layers. ACS applied materials & interfaces, 5(14), 6535-6540.