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      Quantum dot light-emitting diode with quantum dots inside the hole transporting layers

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      Author
      Leck, K. S.
      Divayana, Y.
      Zhao, D.
      Young, X.
      Abiyasa, A. P.
      Mutlugun, E.
      Gao, Y.
      Liu, S.
      Tan, S. T.
      Sun, X. W.
      Demir, H. V.
      Date
      2013
      Journal Title
      ACS Applied Materials and Interfaces
      ISSN
      1944-8244
      Publisher
      American Chemical Society
      Volume
      5
      Issue
      14
      Pages
      6535 - 6540
      Language
      English
      Type
      Article
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      Please cite this item using this persistent URL
      http://hdl.handle.net/11693/11877
      Abstract
      We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
      Published as
      http://dx.doi.org/10.1021/am400903c
      Collections
      • Department of Electrical and Electronics Engineering 2972
      • Department of Physics 2033
      • Institute of Materials Science and Nanotechnology 1393

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