Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A Theoretical Assessment
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11733
- Department of Physics 
Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide bandgap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter. (c) 2008 Elsevier B.V. All rights reserved.
Yıldırım, H., & Bulutay, C. (2008). Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment. Optics Communications, 281(15), 4118-4120.