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dc.contributor.authorYerli, S.en_US
dc.contributor.authorSerincan, U.en_US
dc.contributor.authorDogan, I.en_US
dc.contributor.authorTokay, S.en_US
dc.contributor.authorGenisel, M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorTuran, R.en_US
dc.date.accessioned2015-07-28T11:58:04Z
dc.date.available2015-07-28T11:58:04Z
dc.date.issued2006en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/11560
dc.description.abstractSilicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2355543en_US
dc.subjectSi Nanocrystalsen_US
dc.subjectRaman-scatteringen_US
dc.subjectAl2o3en_US
dc.subjectFilms,luminescenceen_US
dc.subjectIrradiationen_US
dc.subjectNanoparticlesen_US
dc.subjectMatricesen_US
dc.subjectSpectraen_US
dc.subjectDevicesen_US
dc.titleFormation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescenceen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage074301-1en_US
dc.citation.epage074301-5en_US
dc.citation.volumeNumber100en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1063/1.2355543en_US
dc.publisherAIP Publishingen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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