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      Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength

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      Author
      Bütün, S.
      Tut, T.
      Bütün, B.
      Gökkavas, M.
      Yu, H.
      Özbay, Ekmel
      Date
      2006-03-21
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing LLC
      Volume
      88
      Issue
      12
      Pages
      123503-1 - 123503-2
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a template. Spectral responsivity, current-voltage, optical transmission, and noise measurements were carried out. The photodetectors exhibited a 229 nm cutoff wavelength and a peak responsivity of 0.53 A/W at 222 nm. Some 100x100 mu m(2) devices have shown a dark current density of 5.79x10(-10) A/cm(2) under 50 V bias. An ultraviolet-visible rejection ratio of seven orders of magnitude was obtained from the fabricated devices.
      Keywords
      Algan
      Photodetectors
      Alxga1-xn
      Permalink
      http://hdl.handle.net/11693/11502
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2186974
      Collections
      • Department of Electrical and Electronics Engineering 3525
      • Nanotechnology Research Center (NANOTAM) 1006
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