Show simple item record

dc.contributor.authorSabnis, V. A.en_US
dc.contributor.authorDemir, H. V.en_US
dc.contributor.authorFidaner, O.en_US
dc.contributor.authorZheng, J. F.en_US
dc.contributor.authorHarris, J. S.en_US
dc.contributor.authorMiller, D. A. B.en_US
dc.contributor.authorLi, N.en_US
dc.contributor.authorWu, T. C.en_US
dc.contributor.authorChen, H. T.en_US
dc.contributor.authorHoung, Y. M.en_US
dc.date.accessioned2015/07/28en_US
dc.date.accessioned2015-07-28T11:57:43Z
dc.date.available2015-07-28T11:57:43Z
dc.date.issued2005en_US
dc.identifier.citationSabnis, V. A., Demir, H. V., Fidaner, O., Zheng, J. F., Harris Jr, J. S., Miller, D. A., ... & Houng, Y. M. (2005). Intimate monolithic integration of chip-scale photonic circuits. Selected Topics in Quantum Electronics, IEEE Journal of, 11(6), 1255-1265.en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/11463
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractIn this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 x 300 mu m footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 mu m on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Journal of Selected Topics in Quantum Electronics en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSTQE.2005.860995en_US
dc.rightsCopyright © 2005 IEEEen_US
dc.subjectIntegrated Optoelectronic Devicesen_US
dc.subjectMonolithic Integrationen_US
dc.subjectPhotonic Switchesen_US
dc.subjectSelective Area Growth (sag)en_US
dc.titleIntimate Monolithic integration of Chip-scale Photonic Circuitsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage1255en_US
dc.citation.epage1265en_US
dc.citation.volumeNumber11en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1109/JSTQE.2005.860995en_US
dc.publisherIEEEen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record