Gain and temporal response of A1GaN solar-blind avalanche photodiodes: An essemble Monte Carlo analysis
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11285
Applied Physics Letters
- Department of Physics 
American Institute of Physics
Multiplication and temporal response characteristics of p(+)-n-n(+) GaN and n-type Schottky Al0.4Ga0.6N avalanche photodiodes (APD) have been analyzed using the ensemble Monte Carlo method. Reasonable agreement is obtained with the published measurements for a GaN APD without any fitting parameters. In the case of AlGaN, the choice of a Schottky contact APD is seen to improve drastically the field confinement resulting in satisfactory gain characteristics. For the GaN APD, an underdamped step response is observed in the rising edge, and a Gaussian profile damping in the falling edge under an optical pulse with the switching speed degrading towards the gain region. In the AlGaN case, alloy scattering is seen to further slow down the temporal response while displacing the gain threshold to higher fields. (C) 2003 American Institute of Physics.
Sevik, C., & Bulutay, C. (2003). Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis. Applied physics letters, 83(7), 1382-1384.