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dc.contributor.authorKimukin, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorÜnlü, S. M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:57:05Z
dc.date.available2015-07-28T11:57:05Z
dc.date.issued2002-03en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/11201
dc.description.abstractIn this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.986815en_US
dc.subjectBandwidth-efficiencyen_US
dc.subjectHigh Speeden_US
dc.subjectP-i-n Photodiodeen_US
dc.subjectPhotodetectoren_US
dc.subjectResonant Cavity Enhanceden_US
dc.subjectDeconvolutionen_US
dc.subjectBandwidthen_US
dc.subjectCavity Resonatorsen_US
dc.subjectMicrowavesen_US
dc.subjectPhotocurrentsen_US
dc.subjectQuantum Efficiencyen_US
dc.subjectSemiconducting Indium Gallium Arsenideen_US
dc.subjectPhotodiodesen_US
dc.titleInGaAs-based high-performance p-i-n photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage366en_US
dc.citation.epage368en_US
dc.citation.volumeNumber14en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1109/68.986815en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
dc.contributor.bilkentauthorBıyıklı, Necmi


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