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      Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells

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      Author(s)
      Besikci, C.
      Bakir, A. T.
      Tanatar, Bilal
      Date
      2000-04-18
      Source Title
      European Physical Journal : Applied Physics
      Print ISSN
      1286-0042
      Publisher
      American Institute of Physics
      Volume
      88
      Issue
      3
      Pages
      1504 - 1510
      Language
      English
      Type
      Article
      Item Usage Stats
      156
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      Abstract
      The effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs (x=0, 0.15, and 0.25) modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The calculated scattering rates are compared in order to see the effects of screening on the inter- and intra-subband scattering. Screening significantly lowers the intra-subband polar optical phonon scattering rates in both lattice matched and pseudomorphic structures. This results in a considerable lowering of the critical electric field beyond which negative differential resistance is seen. Screening also modifies the dependence of transport properties on the quantum well parameters. The results of the ensemble Monte Carlo simulations of high electron mobility transistors show that the performance of the device is considerably underestimated, if screening is not included in the calculation of the polar optical phonon scattering rates. (C) 2000 American Institute of Physics.
      Keywords
      Monte-carlo Simulation
      Semiconductor Layers
      Phonon Interaction
      Heterostructures
      Scattering
      Gas
      Ga0.51in0.49p
      Temperatures
      Permalink
      http://hdl.handle.net/11693/11157
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.373846
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      • Department of Physics 2397
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