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      A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

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      Author(s)
      Narin, P.
      Kutlu-Narin, E.
      Atmaca, G.
      Sarikavak-Lisesivdin, B.
      Lisesivdin, S. B.
      Özbay, Ekmel
      Date
      2022-04-08
      Source Title
      Surface and Interface Analysis
      Print ISSN
      0142-2421
      Electronic ISSN
      1096-9918
      Publisher
      Wiley
      Volume
      54
      Issue
      5
      Pages
      576 - 583
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 108 cm2 for Sample B with a lattice-matched In0.17Al0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).
      Keywords
      AFM
      GaN
      Structural properties
      Utrathin
      XRD
      Permalink
      http://hdl.handle.net/11693/111234
      Published Version (Please cite this version)
      https://doi.org/10.1002/sia.7067
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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