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dc.contributor.authorAkhavan, S.en_US
dc.contributor.authorGungor, K.en_US
dc.contributor.authorMutlugun, E.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2015/07/28en_US
dc.date.accessioned2015-07-28T11:55:59Z
dc.date.available2015-07-28T11:55:59Z
dc.date.issued2013en_US
dc.identifier.citationAkhavan, S., Gungor, K., Mutlugun, E., & Demir, H. V. (2013). Plasmonic light-sensitive skins of nanocrystal monolayers. Nanotechnology, 24(15), 155201.en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://hdl.handle.net/11693/10821
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractWe report plasmonically coupled light-sensitive skins of nanocrystal monolayers that exhibit sensitivity enhancement and spectral range extension with plasmonic nanostructures embedded in their photosensitive nanocrystal platforms. The deposited plasmonic silver nanoparticles of the device increase the optical absorption of a CdTe nanocrystal monolayer incorporated in the device. Controlled separation of these metallic nanoparticles in the vicinity of semiconductor nanocrystals enables optimization of the photovoltage buildup in the proposed nanostructure platform. The enhancement factor was found to depend on the excitation wavelength. We observed broadband sensitivity improvement (across 400-650 nm), with a 2.6-fold enhancement factor around the localized plasmon resonance peak. The simulation results were found to agree well with the experimental data. Such plasmonically enhanced nanocrystal skins hold great promise for large-area UV/visible sensing applications.en_US
dc.language.isoEnglishen_US
dc.source.titleNanotechnologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0957-4484/24/15/155201en_US
dc.rightsCopyright © 2013 IOP Publishing Ltd.en_US
dc.subjectSemiconductor Nanocrystalsen_US
dc.subjectSolar-cellsen_US
dc.subjectBroad-banden_US
dc.subjectEnhancementen_US
dc.subjectDevicesen_US
dc.titlePlasmonic light-sensitive skins of nanocrystal monolayersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage155201-1en_US
dc.citation.epage155201-8en_US
dc.citation.volumeNumber24en_US
dc.citation.issueNumber15en_US
dc.identifier.doi10.1088/0957-4484/24/15/155201en_US
dc.publisherIOP Publishingen_US


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