Now showing items 1-4 of 4
Molecular-dynamics study of self-interstitials in silicon
(American Physical Society, 1987)
Results of a molecular-dynamics computer simulation are presented for atomic relaxations and relaxation energies for self-interstitials in a silicon crystal. The Stillinger-Weber model potential containing two- and three-body ...
Long-range order and segregation in semiconductor superlattices
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered phases in epitaxially grown Ga1-xAlxAs and strained Si1-xGex alloys are metastable, in the sense that segregation into ...
Scanning-tunneling microscopy at small tip-to-surface distances
The scanning-tunneling microscopy (STM) of graphite at small tip-to-surface distances is investigated using the self-consistent-field pseudopotential method. We have calculated potential, charge density in the region between ...
Metallization of Silicon upon Potassium Adsorption
We report novel features of potassium deposition on a Si(111)-(2×1) surface as a function of coverage. The binding is ionic even at the saturation coverage without any overlayer metallization. Up to a threshold coverage, ...