Now showing items 1-10 of 54
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely ...
White CdS nanoluminophore based tunable hybrid light emitting diodes
The study aims to fabricate and demonstrate hybrid white light emitting diodes that integrate white emitting CdS nanoluminophores with high light quality. Results show that the white light properties of these hybrid WLED ...
Nanocrystal hybridized white light sources integrated on near UV leds
(World Scientific Publishing, 2007)
We report on CdSe/ZnS core-shell nanocrystal (NC) based white light sources integrated on near-UV InGaN/GaN light emitting diodes (LEDs). We present the design, epitaxial growth, fabrication, integration and characterization ...
White light generation with azide functionalized polyfluorene hybridized on near-UV light emitting diode
We present white light generation using poly[(9,9-dihexylfluorene)-co-alt- (9,9-bis-(6- azidohexyl)fluorene] (PFA) for the first time. Hybridizing PFA on near-UV LED, we demonstrate high color rendering index up to 91.0.
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ...
Energy-saving quality road lighting with colloidal quantum dot nanophosphors
(Walter de Gruyter GmbH, 2014)
Here the first photometric study of road-lighting white light-emitting diodes (WLEDs) integrated with semiconductor colloidal quantum dots (QDs) is reported enabling higher luminance than conventional light sources, ...
Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode ...
Implementation of graphene multilayer electrodes in quantum dot light-emitting devices
(Springer Verlag, 2015)
Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we ...
Highly flexible, electrically driven, top-emitting, quantum dot light-emitting stickers
(American Chemical Society, 2014)
Flexible information displays are key elements in future optoelectronic devices. Quantum dot light-emitting diodes (QLEDs) with advantages in color quality, stability, and cost-effectiveness are emerging as a candidate for ...
Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes
(Optical Society of American (OSA), 2015)
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...