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Guiding, bending, and splitting of electromagnetic waves in highly confined photonic crystal waveguides
(American Physical Society, 2001)
We have experimentally demonstrated the guiding, bending, and splitting of electromagnetic (EM) waves in highly confined waveguides built around three-dimensional layer-by-layer photonic crystals by removing a single rod. ...
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
(American Institute of Physics, 2002)
We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible ...
45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
(IEEE, 2001)
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector
(American Institute of Physics., 2000)
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance ...
Highly doped silicon micromachined photonic crystals
(IEEE, Piscataway, NJ, United States, 2000)
Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control ...
Heavy photons at coupled-cavity waveguide band edges in a three-dimensional photonic crystal
(American Physical Society, 2000)
We report on measurements of delay time corresponding to evanescent coupled-cavity modes in three-dimensional photonic crystals. By creating a defect inside the crystal, photons are confined within a boxlike cavity of ...
1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000)
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Propagation of photons by hopping: A waveguiding mechanism through localized coupled cavities in three-dimensional photonic crystals
(American Physical Society, 2000)
A new type of waveguiding mechanism in three-dimensional photonic band-gap structures is demonstrated. Photons propagate through strongly localized defect cavities due to coupling between adjacent cavity modes. High ...
Multiple slow waves and relevant transverse transmission and confinement in chirped photonic crystals
(OSA Publishing, 2014-09-02)
The dispersion properties of rod-type chirped photonic crystals (PhCs) and non-channeled transmission in the direction of the variation of structural parameters from one cell of such a PhC to another are studied. Two types ...
Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
(American Institute of Physics, 2002-05-01)
Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface ...