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    • Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates 

      Gülseren, Melisa Ekin; Bozok, Berkay; Kurt, Gökhan; Kayal, Ömer Ahmet; Öztürk, Mustafa; Ural, Sertaç; Bütün, Bayram; Özbay, Ekmel (SPIE, 2019-02)
      A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer ...