Now showing items 1-1 of 1

    • Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes 

      Zhang, Y.; Zhang Z.-H.; Tan S.T.; Hernandez-Martinez, P. L.; Zhu B.; Lu S.; Kang, X. J.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics Inc., 2017)
      Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...