Now showing items 1-2 of 2

    • Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon 

      El-Atab, N.; Alqatari, S.; Oruc F.B.; Souier, T.; Chiesa, M.; Okyay, Ali Kemal; Nayfeh, A. (AIP Publishing, 2013)
      A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ...
    • Implementation of graphene multilayer electrodes in quantum dot light-emitting devices 

      Wolff, S.; Jansen, D.; Terlinden H.; Kelestemur, Y.; Mertin W.; Demir, Hilmi Volkan; Bacher G.; Nannen, E. (Springer Verlag, 2015)
      Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we ...