Browsing by Keywords "Silicon compounds"
Now showing items 1-18 of 18
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Analysis of Fe nanoparticles using XPS measurements under d.c. or pulsed-voltage bias
(2010)The impact of solution exposure on the charging properties of oxide coatings on Fe metal-core oxide-shell nanoparticles has been examined by sample biasing during XPS measurements. The Fe nanoparticles were suspended in ... -
Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxides
(American Chemical Society, 2016)Area-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. Here, we demonstrate a methodology to achieve ... -
Charging/discharging dynamics of CdS and CdSe films under photoillumination using dynamic x-ray photoelectron spectroscopy
(A I P Publishing LLC, 2010)Thin films of CdS and CdSe are deposited on HF-cleaned Si O2 /Si substrates containing ∼5 nm thermally grown silicon oxide. x-ray photoelectron spectroscopy (XPS) data of these films are collected in a dynamic mode, which ... -
Differentiation of domains in composite surface structures by charge-contrast x-ray photoelectron spectroscopy
(2007)An external bias is applied to two samples containing composite surface structures, while recording an XPS spectrum. Altering the polarity of the bias affects the extent of differential charging in domains that are chemically ... -
Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A theoretical assessment
(Elsevier, 2008)Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive ... -
Generation of new frequencies in toroid microcavities
(IEEE, 2008)Microtoroid cavities with ultra high Q-factor have been fabricated using a combined process of photolithography and reflow technique for observing non-linear effects such as generation of new frequency components. For this ... -
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
(American Institute of Physics Inc., 2017)The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient ... -
High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror
(IEEE, Piscataway, NJ, United States, 2000)Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the ... -
Organization of bridging organics in periodic mesoporous organosilicas (PMOs)-polarization micro-raman spectroscopy
(Wiley, 2001)The organization of bridging organics in oriented periodic mesoporous organosilica film (OPMOF) was demonstrated using the polarization micro-Raman spectroscopy (PMRS) in conjunction with powder x-ray diffraction (PXRD) ... -
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
(Wiley, 2007)Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ... -
Response of polyelectrolyte layers to the SiO2 substrate charging as probed by XPS
(2009)A single layer of the Cationic polyelectrolyte poly(allyamine) hydrochloride (PAH) deposited, using the layer-by-layer technique, on a silicon substrate containing 5 nm oxide layer is investigated by XPS while applying an ... -
Selective-area high-quality germanium growth for monolithic integrated optoelectronics
(Institute of Electrical and Electronics Engineers, 2012-03-02)Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ... -
Soft x-ray photoemission studies of the HfO2/SiO2/Si system
(American Institute of Physics, 2002)Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV ... -
Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
(Wiley, 2008-05)Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured ... -
Structural and loss characterization of SiON layers for optical waveguide applications
(IEEE, 2000)Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. ... -
Superhydrophobic, hybrid, electrospun cellulose acetate nanofibrous mats for oil/water separation by tailored surface modification
(American Chemical Society, 2016)Electrospun cellulose acetate nanofibers (CA-NF) have been modified with perfluoro alkoxysilanes (FS/CA-NF) for tailoring their chemical and physical features aiming oil-water separation purposes. Strikingly, hybrid FS/CA-NF ... -
TEM studies of Ge nanocrystal formation in PECVD grown SiO 2: Ge / SiO2 multilayers
(Institute of Physics, 2006)We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were ... -
X-ray photoemission for probing charging/discharging dynamics
(American Chemical Society, 2006)A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to ± 10.0 V square-wave pulses with varying ...
