Browsing by Keywords "Responsivity"
Now showing items 1-7 of 7
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AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008)We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ... -
Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors
(AIP, 2012)Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ... -
Au/TiO2 nanorod-based Schottky-type UV photodetectors
(Wiley, 2012-10-12)TiO2 nanorods (NRs) were synthesized on fluorine-doped tin oxide (FTO) pre-coated glass substrates using hydrothermal growth technique. Scanning electron microscopy studies have revealed the formation of vertically-aligned ... -
Investigation of bias current and modulation frequency dependences of detectivity of YBCO TES and the effects of coating of Cu-C composite absorber layer
(2009)Bolometric response and noise characteristics of YBCO superconductor transition edge IR detectors with relatively sharp transition and its resulting detectivity are investigated both theoretically and experimentally. The ... -
Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control
(IEEE, 2013)We fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds ... -
Silicon-Germanium multi-quantum well photodetectors in the near infrared
(Optical Society of American (OSA), 2012)Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ... -
Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors
(IOP Institute of Physics Publishing, 2012)We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ...
