Now showing items 1-9 of 9

    • Balancing gain narrowing with self phase modulation: 100-fs, 800-nJ from an all-fiber-integrated Yb amplifier 

      Pavlov I.; Rybak, A.; Cenel, C.; Ilday F.O. (IEEE Computer Society, 2013)
      There is much progress in Yb-fiber oscillator-amplifier systems, which enable generation of high-repetition-rate, microjoule energies and sub-picosecond pulse widths [1,2]. Given the extremely large total gain factors to ...
    • Design of high power S-band GaN MMIC power amplifiers for WiMAX applications 

      Cengiz Ö.; Kelekçi Ö.; Arican G.O.; Özbay, E.; Palamutçuoǧullari O. (2011)
      This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of ...
    • Design of multi-octave band GaN-HEMT power amplifier 

      Eren G.; Sen O.A.; Bolukbas, B.; Kurt G.; Arican O.; Cengiz O.; Unal, S.T.K.; Durmus, Y.; Ozbay, E. (2012)
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ...
    • High power K-band GaN on SiC CPW monolithic power amplifier 

      Cengiz O.; Sen O.; Ozbay, E. (Institute of Electrical and Electronics Engineers Inc., 2014)
      This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ...
    • Innovative laser sources operating around 2 μm 

      Kracht D.; Sayinc H.; Yilmaz S.; Wysmolek M.; Hausmann K.; Ottenhues C.; Wandt D.; Wienke A.; Neumann J. (Elsevier B.V., 2016)
      We report on a variety of continuous wave and pulsed laser sources based on Thulium- and Holmium-doped materials, emitting in the spectral range around 2 μm. This includes continuous wave Thulium-doped fiber lasers which ...
    • Novel predistortion algorithm for OFDMA 

      Ali, S.; Markarian G.; Arikan, E. (2009)
      The RF amplifier in a wireless communication system is usually non-linear in nature. If such an amplifier is used in OFDMA based systems, it will cause serious degradation. This degradation will be both in terms of the ...
    • Performance of edge windowing for OFDM under non-linear power amplifier effects 

      Göken, C.; Dizdar, O. (Institute of Electrical and Electronics Engineers Inc., 2017)
      Edge windowing is a windowing technique for Orthogonal Frequency Division Multiplexing (OFDM) signals based on the idea of using shorter cyclic prefix (CP) and longer window lengths at the edge subcarriers while keeping ...
    • Structural field plate length optimization for high power applications 

      Toprak, A.; Kurt G.; Sen O.A.; Ozbay, E. (Institute of Electrical and Electronics Engineers Inc., 2014)
      In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ...
    • Study of the power performance of gaN based HEMTs with varying field plate lengths 

      Kurt G.; Toprak, A.; Sen O.A.; Ozbay, E. (North Atlantic University Union, 2015)
      In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ...