Browsing by Keywords "Plasma-enhanced atomic layer deposition"
Now showing items 1-5 of 5
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Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ... -
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
(Institute of Electrical and Electronics Engineers Inc., 2015)In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Plasma-enhanced atomic layer deposition of III-nitride thin films
(Electrochemical Society Inc., 2013)AlN and GaN thin films were deposited by plasma-enhanced atomic layer deposition using trimethylmetal precursors. The films were found to have high oxygen incorporation, which was attributed to oxygen contamination related ... -
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
