Now showing items 1-6 of 6

    • Design of multi-octave band GaN-HEMT power amplifier 

      Eren, Gulesin; Şen, Özlem A.; Bölükbaş, Basar; Kurt, Gökhan; Arıcan, Orkun; Cengiz, Ömer; Ünal, Sıla T.K.; Durmuş, Yıldırım; Özbay, Ekmel (IEEE, 2012)
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ...
    • Efficient and accurate EM simulation technique for analysis and design of MMICs 

      Kınayman, N.; Aksun, M. I. (John Wiley & Sons, Inc., 1997)
      A numerically efficient technique for the analysis and design of MMIC circuits is introduced and applied to some realistic problems. The formulation is based on the method of moments (MoM) in the spatial domain, and utilizes ...
    • Efficient use of closed-form Green's functions for the analysis of planar geometries with vertical connections 

      Kınayman, N.; Aksun, M. I. (Institute of Electrical and Electronics Engineers, 1997-05)
      An efficient and rigorous method for the analysis of planarly layered geometries with vertical metallizations is presented. The method is based on the use of the closed-form spatial-domain Green's functions in conjunction ...
    • Implementation of graphene multilayer electrodes in quantum dot light-emitting devices 

      Wolff, S.; Jansen, D.; Terlinden H.; Kelestemur, Y.; Mertin W.; Demir, Hilmi Volkan; Bacher G.; Nannen, E. (Springer Verlag, 2015)
      Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we ...
    • Memristive behavior in a junctionless flash memory cell 

      Orak, I.; Ürel, M.; Bakan, G.; Dana, A. (American Institute of Physics Inc., 2015)
      We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented ...
    • Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier 

      Schwindt, R.S.; Kumar V.; Aktas, O.; Lee J.-W.; Adesida I. (2004)
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and ...