Now showing items 1-8 of 8

    • Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing 

      Yu H.-Y.; Park J.-H.; Okyay, A., K.; Saraswat, K.C. (2008)
      We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). ...
    • Design considerations for MMIC distributed amplifiers 

      Ergun, Şanlı; Atalar, Abdullah (IEEE, 1994)
      The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs ...
    • High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration 

      Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C. (IEEE, 2009)
      We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ...
    • High-stability, high-efficiency organic monoliths made of oligomer nanoparticles wrapped in organic matrix 

      Soran-Erdem Z.; Erdem, T.; Gungor K.; Pennakalathil, J.; Tuncel, D.; Demir, H. V. (American Chemical Society, 2016)
      Oligomer nanoparticles (OL NPs) have been considered unsuitable for solid-state lighting due to their low quantum yields and low temperature stability of their emission. Here, we address these problems by forming highly ...
    • Integrated AlGaN quadruple-band ultraviolet photodetectors 

      Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Ozbay, E. (IOP Publishing, 2012-04-27)
      Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. ...
    • Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon 

      Hyung Nam J.; Alkis, S.; Nam, D.; Afshinmanesh F.; Shim J.; Park, J.; Brongersma, M.; Okyay, A., K.; Kamins, T.I.; Saraswat, K. (Elsevier, 2015)
      A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). ...
    • Selective-area high-quality germanium growth for monolithic integrated optoelectronics 

      Yu, H. Y.; Park, J. H.; Okyay, A., K.; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2012-03-02)
      Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ...
    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, A., K. (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...