Now showing items 1-2 of 2

    • Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC 

      Caban, P.; Strupinski, W.; Szmidt, J.; Wojcik, M.; Gaca, J.; Kelekci, O.; Caliskan, D.; Özbay, Ekmel (Elsevier, 2010-09-25)
      The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact ...
    • Investigation of AlGaN buffer layers on sapphire grown by MOVPE 

      Van Gemmern, P.; Dikme, Y.; Bıyıklı, Necmi; Kalisch, H.; Özbay, Ekmel; Jansen, R. H.; Heuken, M. (SPIE, 2004)
      In this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the ...