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    • Selective-area high-quality germanium growth for monolithic integrated optoelectronics 

      Yu, H. Y.; Park, J. H.; Okyay, Ali Kemal; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2012-03-02)
      Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ...