Now showing items 1-2 of 2

    • Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime 

      Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A. (The American Physical Society, 2003)
      Momentum and energy relaxation characteristics of electrons in the conduction band of GaN and AlN are investigated using two different theoretical approaches corresponding to two high electric-field regimes, one up to 1-2 ...
    • Systematic study of adsorption of single atoms on a carbon nanotube 

      Durgun, Engin; Dag, S.; Bagci, V. M. K.; Gülseren, O.; Yildirim, T.; Çıracı, Salim (American Physical Society, 2003)
      We studied the adsorption of single atoms on a semiconducting and metallic single-wall carbon nanotube from first principles for a large number of foreign atoms. The stable adsorption sites, binding energy, and the resulting ...