Browsing by Keywords "Interface states"
Now showing items 1-10 of 10
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Colloidal nanoplatelet/conducting polymer hybrids: excitonic and material properties
(American Chemical Society, 2016)Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe ... -
Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires
(A I P Publishing LLC, 2015)We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Feature extraction and classification in a two-state brain-computer interface
(Institute of Electrical and Electronics Engineers Inc., 2017)Brain Computer Interface (BCI) technology is used to help patients who do not have control over motor neurons such as ALS or paralyzed patients, to communicate with outer world. This work aims to classify motor imageries ... -
Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Optoelectronica,National Institute of Research and Development for Optoelectronics, 2010)The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series resistances (R s), depletion layer width (W D) and interface state densities (N SS) of (Ni/Au)/AlGaN/AlN/GaN heterostructures ... -
On the interface states and series resistance profiles of (Ni/Au)-Al 0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation
(Taylor and Francis, 2010-06-09)The values of interface states (NSS) and series resistance (RS) of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures were obtained from admittance and current-voltage measurements before and after 250kGy 60Co irradiation. The ... -
The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures
(Elsevier BV, 2008-11)The temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance ... -
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
(Royal Society of Chemistry, 2015)Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally ... -
Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructures
(Wiley, 2010-03-28)The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the ...
