Browsing by Keywords "InGaN"
Now showing items 1-9 of 9
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Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
(SPIE, 2012-07-26)We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current ... -
Blue InGaN/GaN-based quantum electroabsorption modulators
(IEEE, 2006)We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical ... -
Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy
(Institute of Physics Publishing, 2018)Photoacoustic (PA) measurements have been performed on a series of InxGa1-xN thin films grown with x > 50%. In order to illustrate the usefulness of this technique, these measurements have been compared with the results ... -
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers
(Elsevier, 2009-10-13)The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither ... -
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ... -
Examination of the temperature related structural defects of InGaN/GaN solar cells
(Academic Press, 2015)In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ... -
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ... -
InGaN green light emitting diodes with deposited nanoparticles
(Elsevier BV, 2007)We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of ... -
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
(ELSEVIER, 2011-02-01)The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities ...
