Now showing items 1-2 of 2

    • Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD 

      Çörekçi, S.; Öztürk, M. K.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. (Springer, 2010-10-23)
      An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
    • Examination of the temperature related structural defects of InGaN/GaN solar cells 

      Durukan, İ. K.; Bayal, Ö.; Kurtuluş, G.; Baş, Y.; Gültekin, A.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Özçelik, S.; Özbay, E. (Academic Press, 2015)
      In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ...