Browsing by Keywords "Gallium arsenide"
Now showing items 1-6 of 6
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Effect of in-material losses on terahertz absorption, transmission, and reflection in photonic crystals made of polar dielectrics
(A I P Publishing LLC, 2015)The effect of the material absorption factor on terahertz absorption (A), transmittance (T), and reflectance (R) for slabs of PhC that comprise rods made of GaAs, a polar dielectric, is studied. The main goal was to ... -
High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes
(IEEE, 1999)The fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. ... -
Idler-efficiency-enhanced long-wave infrared beam generation using aperiodic orientation-patterned GaAs gratings
(Optical Society of America, 2016)In this paper, we design aperiodic gratings based on orientation-patterned gallium arsenide (OP-GaAs) for converting 2.1 μm pump laser radiation into long-wave infrared (8-12 μm) in an idler-efficiency-enhanced scheme. ... -
Lasing action in single subwavelength particles supporting supercavity modes
(American Chemical Society, 2020-05)On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction ... -
Quantum size effect on the phonon-induced Zeeman splitting in a GaAs quantum dot with Gaussian and parabolic confining potentials
(Elsevier B.V., 2008)The Zeeman splitting of the ground and the first excited level of a Gaussian GaAs quantum dot is studied in the presence of electron-longitudinal-optical (LO)-phonon interaction incorporating the spin of the electron and ... -
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
(Institute of Physics Publishing Ltd., 2016)The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, ...
