Browsing by Keywords "Excitation intensity"
Now showing items 1-4 of 4
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Defect luminescence in undoped p-type GaSe
(Taylor & Francis, 2001)Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ... -
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
(Pergamon Press, 1998)The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band ... -
Flexible and fragmentable tandem photosensitive nanocrystal skins
(Royal Society of Chemistry, 2016)We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential ... -
Observation of biexcitons in the presence of trions generated via sequential absorption of multiple photons in colloidal quantum dot solids
(IEEE, 2012)Multi exciton generation (MEG) and multi exciton recombination (MER) in semiconductor quantum dots (QDs) have recently attracted significant scientific interest as a possible means to improve device efficiencies [1-5]. ...
