Browsing by Keywords "Electron energy loss spectroscopy"
Now showing items 1-5 of 5
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Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
(Wiley, 2007)Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ... -
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
(Royal Society of Chemistry, 2015)Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally ... -
SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers
(World Scientific Publishing, 2009)We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray ... -
Synthesis and size differentiation of Ge nanocrystals in amorphous SiO 2
(Springer, 2006)Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron ... -
Theoretical and spectroscopic investigations on the structure and bonding in B-C-N thin films
(2009)In this study, we have synthesized boron, carbon, and nitrogen containing films using RF sputter deposition. We investigated the effects of deposition parameters on the chemical environment of boron, carbon, and nitrogen ...
