Browsing by Keywords "Electric resistance"
Now showing items 1-9 of 9
-
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
(2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Electronic transport through a kink in an electron waveguide
(Institute of Electrical and Electronics Engineers, 1994)The current-voltage denendence correspondinp to electronic transport through a kink in an electronic waveguide is analyzed. No phase breaking dissipation mechanisms are considered, but the effects of the Coulomb interaction ... -
High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
(2009)We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ... -
High-Speed InSb photodetectors on GaAs for mid-IR applications
(IEEE, 2004)We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K ... -
Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
(2006)The growth of high-performance Mg-doped p-type Al xGa 1-xN (x = 0.35) layers using low-pressure metal-organic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the ... -
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
(Elsevier, 2011-06-08)In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
Point normal metal-superconductor (NS) contact in nonballistic regime
(World Scientific, 2003)We analyze the point NS contact conductivity taking into account the depression of superconductivity at high-injection current density and Andreev reflection at the adaptive NS boundary. The dependence of the excess current ...
