Now showing items 1-2 of 2

    • On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes 

      Zhang Z.-H.; Tan S.T.; Ju, Z.; Liu W.; Ji Y.; Kyaw, Z.; Dikme, Y.; Sun, X. W.; Demir, Hilmi Volkan (IEEE, 2013)
      InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields ...
    • On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes 

      Zhang, Z. H.; W. L.; Tan, S. T.; Ju, Z.; Ji, Y.; Kyaw, Z.; Zhang, X.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)
      Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...