Now showing items 1-4 of 4

    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydinli, A. (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • High-Speed Solar-Blind AlGaN Schottky Photodiodes 

      Biyikli, N.; Kimukin I.; Kartaloglu, T.; Aytür O.; Ozbay, E. (2003)
      We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ...
    • Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN 

      Bütün, S.; Gökkavas, M.; Yu, H.; Özbay, E. (AIP Publishing LLC, 2006)
      Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoglu, O.; Muti, A.; Turan, R.; Ergun, Y.; Aydinli, A. (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...