Browsing by Keywords "Current voltage characteristics"
Now showing items 1-12 of 12
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Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13)The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ... -
Electric breakdown in polycrystalline semiconductors with highly nonlinear I-V characteristics: Simulations for simple barrier height models
(1997)An extension of the Canessa and Nguyen binary model for the nonlinear current-voltage (I-V) characteristics of polycrystalline semiconductors, based on the electrical properties of individual grains, is presented. Simple ... -
Electronic properties of polypyrrole/polyindene composite/metal junctions
(Elsevier, 1997)Junction properties between conducting polymer composites of polypyrrole/polyindene (PPy/PIn) with different conductivities and metals like Pt, Au, Al and In have been investigated. Rectifying junctions were observed for ... -
High-performance solar-blind AlGaN photodetectors
(2004)High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ... -
High-Speed Solar-Blind AlGaN Schottky Photodiodes
(2003)We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ... -
High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts
(American Institute of Physics, 2003)AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. ... -
High-speed visible-blind GaN-based ITO-Schottky photodiodes
(2002)In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ... -
Junction characteristics and magnetic field dependencies of low noise step edge junction Rf-SQUIDs for unshielded applications
(IEEE, 2003-06)Step edge grain boundary (GB) junctions and rf-SQUIDs have been made using pulsed laser deposited Y-Ba-Cu-O films on crystalline LaAlO3 substrates. The steps were developed using various ion-beam etching processes resulting ... -
Noise, junction characteristics, and magnetic field dependencies of bicrystal grain boundary junction Rf-SQUIDs
(IEEE, 2003)Bicrystal grain boundary (GB) Josephson junctions and rf-SQUID's were made of 200 nm thick PLD YBCO films on bi-crystal SrTiO3 substrates. The junction characteristics were studied to investigate optimal parameters in the ... -
Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
(IEEE, 2004)We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ... -
Spintronic properties of zigzag-edged triangular graphene flakes
(AIP Publishing LLC, 2010)We investigate quantum transport properties of triangular graphene flakes with zigzag edges by using first principles calculations. Triangular graphene flakes have large magnetic moments which vary with the number of ...
