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    • Trap levels in layered semiconductor Ga2SeS 

      Aydınlı, Atilla; Gasanly, N. M.; Aytekin, S. (Elsevier, 2004)
      Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ...