Now showing items 1-6 of 6

    • Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength 

      Bütün, S.; Tut, T.; Bütün, B.; Gökkavas, M.; Yu, H.; Özbay, E. (AIP Publishing LLC, 2006-03-21)
      Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a ...
    • High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures 

      Ozbay, E.; Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O. (IEEE, 2004)
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ...
    • InGaN/GaN light-emitting diode with a polarization tunnel junction 

      Zhang Z.-H.; Tan S.T.; Kyaw, Z.; Ji Y.; Liu W.; Ju, Z.; Hasanov N.; Sun, X. W.; Demir, H. V. (American Institute of Physics, 2013)
      We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed ...
    • On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes 

      Kyaw, Z.; Zhang, Z. H.; Liu, W.; Tan, S. T.; Ju, Z. G.; Zhang, X. L.; Ji, Y.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, H. V. (Optical Society of America, 2014-01-07)
      N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...
    • Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes 

      Kyaw, Z.; Zhang Z.-H.; Liu W.; Tan S.T.; Ju, Z. G.; Zhang, X. L.; Ji Y.; Hasanov N.; Zhu B.; Lu S.; Zhang, Y.; Teng, J. H.; Wei, S. X.; Demir, H. V. (AIP Publishing, 2014-04-24)
      A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was ...
    • Solar-blind AlxGa1-xN-based avalanche photodiodes 

      Tut, T.; Butun, S.; Butun, B.; Gokkavas, M.; Yu, H. B.; Ozbay, E. (American Institute of Physics, 2005)
      We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible ...