Now showing items 1-3 of 3

    • Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals 

      Aydnl, A.; Gasanly, N. M.; Gökşen, K. (Elsevier Science, 2001)
      Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm ...
    • Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal 

      Gasanly, N. M.; Aydnl, A.; Özkan, H.; Kocabaş, C. (Elsevier Science, 2002)
      The temperature dependencies (15-300 K) of seven Raman-active mode frequencies and linewidths in layered gallium selenide have been measured in the frequency range from 10 to 320 cm-1. We observed softening and broadening ...
    • Trap levels in layered semiconductor Ga2SeS 

      Aydinli, A.; Gasanly, N. M.; Aytekin, S. (Elsevier, 2004)
      Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ...