Now showing items 1-17 of 17

    • Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes 

      Arslan, E.; Bütün, S.; Şafak, Y.; Çakmak, H.; Yu, H.; Özbay, Ekmel (Elsevier, 2010-10-13)
      The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ...
    • Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength 

      Bütün, S.; Tut, T.; Bütün, B.; Gökkavas, M.; Yu, H.; Özbay, Ekmel (AIP Publishing LLC, 2006-03-21)
      Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a ...
    • Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors 

      Gökkavas, M.; Bütün, S.; Yu, H.; Tut, T.; Bütün, B.; Özbay, Ekmel (AIP Publishing LLC, 2006)
      Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an ...
    • Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs 

      Çörekçi, S.; Öztürk, M. K.; Yu, H.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel (Pleiades Publishing, 2013)
      Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
    • Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD 

      Kelekci, O.; Tasli, P. T.; Yu, H.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel (Wiley, 2012-01-24)
      The electron transport properties in Al0.25Ga0.75N/AlN/GaN/InxGa1-xN/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on c-plane sapphire ...
    • A global reference for human genetic variation 

      Auton, A.; Abecasis, G. R.; Altshuler, D. M.; Durbin, R. M.; Bentley, D. R.; Chakravarti, A.; Clark, A. G.; Donnelly, P.; Eichler, E. E.; Flicek, P.; Gabriel, S. B.; Gibbs, R. A.; Green, E. D.; Hurles, M. E.; Knoppers, B. M.; Korbel, J. O.; Lander, E. S.; Lee, C.; Lehrach, H.; Mardis, E. R.; Marth, G. T.; McVean, G. A.; Nickerson, D. A.; Schmidt, J. P.; Sherry, S. T.; Wang, J.; Wilson, R. K.; Boerwinkle, E.; Doddapaneni, H.; Han, Y.; Korchina, V.; Kovar, C.; Lee, S.; Muzny, D.; Reid, J. G.; Zhu, Y.; Chang, Y.; Feng, Q.; Fang, X.; Guo, X.; Jian, M.; Jiang, H.; Jin, X.; Lan, T.; Li, G.; Li, J.; Li, Y.; Liu, S.; Liu, X.; Lu, Y.; Ma, X.; Tang, M.; Wang, B.; Wang, G.; Wu, H.; Wu, R.; Xu, X.; Yin, Y.; Zhang, D.; Zhang, W.; Zhao, J.; Zhao, M.; Zheng, X.; Gupta, N.; Gharani, N.; Toji, L. H.; Gerry, N. P.; Resch, A. M.; Barker, J.; Clarke, L.; Gil, L.; Hunt, S. E.; Kelman, G.; Kulesha, E.; Leinonen, R.; McLaren, W. M.; Radhakrishnan, R.; Roa, A.; Smirnov, D.; Smith, R. E.; Streeter, I.; Thormann, A.; Toneva, I.; Vaughan, B.; Zheng-Bradley, X.; Grocock, R.; Humphray, S.; James, T.; Kingsbury, Z.; Sudbrak, R.; Albrecht, M. W.; Amstislavskiy, V. S.; Borodina, T. A.; Lienhard, M.; Mertes, F.; Sultan, M.; Timmermann, B.; Yaspo, Marie-Laure; Fulton, L.; Ananiev, V.; Belaia, Z.; Beloslyudtsev, D.; Bouk, N.; Chen, C.; Church, D.; Cohen, R.; Cook, C.; Garner, J.; Hefferon, T.; Kimelman, M.; Liu, C.; Lopez, J.; Meric, P.; O'Sullivan, C.; Ostapchuk, Y.; Phan, L.; Ponomarov, S.; Schneider, V.; Shekhtman, E.; Sirotkin, K.; Slotta, D.; Zhang, H.; Balasubramaniam, S.; Burton, J.; Danecek, P.; Keane, T. M.; Kolb-Kokocinski, A.; McCarthy, S.; Stalker, J.; Quail, M.; Davies, C. J.; Gollub, J.; Webster, T.; Wong, B.; Zhan, Y.; Campbell, C. L.; Kong, Y.; Marcketta, A.; Yu, F.; Antunes, L.; Bainbridge, M.; Sabo, A.; Huang, Z.; Coin, L. J. M.; Fang, L.; Li, Q.; Li, Z.; Lin, H.; Liu, B.; Luo, R.; Shao, H.; Xie, Y.; Ye, C.; Yu, C.; Zhang, F.; Zheng, H.; Zhu, H.; Alkan, C.; Dal, E.; Kahveci, F.; Garrison, E. P.; Kural, D.; Lee, W. P.; Leong, W. F.; Stromberg, M.; Ward, A. N.; Wu, J.; Zhang, M.; Daly, M. J.; DePristo, M. A.; Handsaker, R. E.; Banks, E.; Bhatia, G.; Del Angel, G.; Genovese, G.; Li, H.; Kashin, S.; McCarroll, S. A.; Nemesh, J. C.; Poplin, R. E.; Yoon, S. C.; Lihm, J.; Makarov, V.; Gottipati, S.; Keinan, A.; Rodriguez-Flores, J. L.; Rausch, T.; Fritz, M. H.; Stütz, A. M.; Beal, K.; Datta, A.; Herrero, J.; Ritchie, G. R. S.; Zerbino, D.; Sabeti, P. C.; Shlyakhter, I.; Schaffner, S. F.; Vitti, J.; Cooper, D. N.; Ball, E. V.; Stenson, P. D.; Barnes, B.; Bauer, M.; Cheetham, R. K.; Cox, A.; Eberle, M.; Kahn, S.; Murray, L.; Peden, J.; Shaw, R.; Kenny, E. E.; Batzer, M. A.; Konkel, M. K.; Walker, J. A.; MacArthur, D. G.; Lek, M.; Herwig, R.; Ding, L.; Koboldt, D. C.; Larson, D.; Ye, K.; Gravel, S.; Swaroop, A.; Chew, E.; Lappalainen, T.; Erlich, Y.; Gymrek, M.; Willems, T. F.; Simpson, J. T.; Shriver, M. D.; Rosenfeld, J. A.; Bustamante, C. D.; Montgomery, S. B.; De La Vega, F. M.; Byrnes, J. K.; Carroll, A. W.; DeGorter, M. K.; Lacroute, P.; Maples, B. K.; Martin, A. R.; Moreno-Estrada, A.; Shringarpure, S. S.; Zakharia, F.; Halperin, E.; Baran, Y.; Cerveira, E.; Hwang, J.; Malhotra, A.; Plewczynski, D.; Radew, K.; Romanovitch, M.; Zhang, C.; Hyland, F. C. L.; Craig, D. W.; Christoforides, A.; Homer, N.; Izatt, T.; Kurdoglu, A. A.; Sinari, S. A.; Squire, K.; Xiao, C.; Sebat, J.; Antaki, D.; Gujral, M.; Noor, A.; Ye, K.; Burchard, E. G.; Hernandez, R. D.; Gignoux, C. R.; Haussler, D.; Katzman, S. J.; Kent, W. J.; Howie, B.; Ruiz-Linares, A.; Dermitzakis, E. T.; Devine, S. E.; Kang, H. M.; Kidd, J. M.; Blackwell, T.; Caron, S.; Chen, W.; Emery, S.; Fritsche, L.; Fuchsberger, C.; Jun, G.; Li, B.; Lyons, R.; Scheller, C.; Sidore, C.; Song, S.; Sliwerska, E.; Taliun, D.; Tan, A.; Welch, R.; Wing, M. K.; Zhan, X.; Awadalla, P.; Hodgkinson, A.; Li, Y.; Shi, X.; Quitadamo, A.; Lunter, G.; Marchini, J. L.; Myers, S.; Churchhouse, C.; Delaneau, O.; Gupta-Hinch, A.; Kretzschmar, W.; Iqbal, Z.; Mathieson, I.; Menelaou, A.; Rimmer, A.; Xifara, D. K.; Oleksyk, T. K.; Fu, Y.; Liu, X.; Xiong, M.; Jorde, L.; Witherspoon, D.; Xing, J.; Browning, B. L.; Browning, S. R.; Hormozdiari, F.; Sudmant, P. H.; Khurana, E.; Tyler-Smith, C.; Albers, C. A.; Ayub, Q.; Chen, Y.; Colonna, V.; Jostins, L.; Walter, K.; Xue, Y.; Gerstein, M. B.; Abyzov, A.; Balasubramanian, S.; Chen, J.; Clarke, D.; Fu, Y.; Harmanci, A. O.; Jin, M.; Lee, D.; Liu, J.; Mu, X. J.; Zhang, J.; Zhang, Y.; Hartl, C.; Shakir, K.; Degenhardt, J.; Meiers, S.; Raeder, B.; Casale, F. P.; Stegle, O.; Lameijer, E. W.; Hall, I.; Bafna, V.; Michaelson, J.; Gardner, E. J.; Mills, R. E.; Dayama, G.; Chen, K.; Fan, X.; Chong, Z.; Chen, T.; Chaisson, M. J.; Huddleston, J.; Malig, M.; Nelson, B. J.; Parrish, N. F.; Blackburne, B.; Lindsay, S. J.; Ning, Z.; Zhang, Y.; Lam, H.; Sisu, C.; Challis, D.; Evani, U. S.; Lu, J.; Nagaswamy, U.; Yu, J.; Li, W.; Habegger, L.; Yu, H.; Cunningham, F.; Dunham, I.; Lage, K.; Jespersen, J. B.; Horn, H.; Kim, D.; Desalle, R.; Narechania, A.; Sayres, M. A. W.; Mendez, F. L.; Poznik, G. D.; Underhill, P. A.; Mittelman, D.; Banerjee, R.; Cerezo, M.; Fitzgerald, T. W.; Louzada, S.; Massaia, A.; Yang, F.; Kalra, D.; Hale, W.; Dan, X.; Barnes, K. C.; Beiswanger, C.; Cai, H.; Cao, H.; Henn, B.; Jones, D.; Kaye, J. S.; Kent, A.; Kerasidou, A.; Mathias, R.; Ossorio, P. N.; Parker, M.; Rotimi, C. N.; Royal, C. D.; Sandoval, K.; Su, Y.; Tian, Z.; Tishkoff, S.; Via, M.; Wang, Y.; Yang, H.; Yang, L.; Zhu, J.; Bodmer, W.; Bedoya, G.; Cai, Z.; Gao, Y.; Chu, J.; Peltonen, L.; Garcia-Montero, A.; Orfao, A.; Dutil, J.; Martinez-Cruzado, J. C.; Mathias, R. A.; Hennis, A.; Watson, H.; McKenzie, C.; Qadri, F.; LaRocque, R.; Deng, X.; Asogun, D.; Folarin, O.; Happi, C.; Omoniwa, O.; Stremlau, M.; Tariyal, R.; Jallow, M.; Joof, F. S.; Corrah, T.; Rockett, K.; Kwiatkowski, D.; Kooner, J.; Hien, T. T.; Dunstan, S. J.; ThuyHang, N.; Fonnie, R.; Garry, R.; Kanneh, L.; Moses, L.; Schieffelin, J.; Grant, D. S.; Gallo, C.; Poletti, G.; Saleheen, D.; Rasheed, A.; Brooks, L. D.; Felsenfeld, A. L.; McEwen, J. E.; Vaydylevich, Y.; Duncanson, A.; Dunn, M.; Schloss, J. A. (Nature Publishing Group, 2015)
      The 1000 Genomes Project set out to provide a comprehensive description of common human genetic variation by applying whole-genome sequencing to a diverse set of individuals from multiple populations. Here we report ...
    • High-efficiency light-emitting diodes of organometal halide perovskite amorphous nanoparticles 

      Xing, J.; Yan, F.; Zhao Y.; Chen, S.; Yu, H.; Zhang, Q.; Zeng, R.; Demir, Hilmi Volkan; Sun, X.; Huan, A.; Xiong, Q. (American Chemical Society, 2016)
      Organometal halide perovskite has recently emerged as a very promising family of materials with augmented performance in electronic and optoelectronic applications including photovoltaic devices, photodetectors, and ...
    • Improvement of breakdown characteristics in AlGaN/GaN/AlxGa 1-xN HEMT based on a grading Al xGa 1-xN buffer layer 

      Yu, H.; Lisesivdin, S. B.; Ozturk, M.; Bolukbas, B.; Kelekci, O.; Ozturk, M. K.; Ozcelik, S.; Caliskan, D.; Cakmak, H.; Demirel, P.; Özbay, Ekmel (Wiley, 2010-08-03)
      To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al xGa 1-xN double heterostructure (DH-HEMTs) were designed and fabricated ...
    • Low damage etching of GaN surfaces via bias-assisted photoenhanced electrochemical oxidation in deionized water 

      Alptekin, E.; Yu, H.; Özbay, Ekmel; Aktas, O. (Springer New York LLC, 2007)
      Properties of GaN surfaces etched by bias-assisted photoenhanced electrochemical (PEC) oxidation in deionized water and subsequent removal of the oxidized material are investigated using Schottky diodes fabricated on etched ...
    • Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN 

      Bütün, S.; Gökkavas, M.; Yu, H.; Özbay, Ekmel (AIP Publishing LLC, 2006)
      Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition ...
    • Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure 

      Yu, H.; Ozturk, M.; Demirel, P.; Cakmak, H.; Bolukbas, B.; Caliskan, D.; Özbay, Ekmel (IOP Publishing, 2011)
      The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor ...
    • Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition 

      Yu, H.; Strupinski, W.; Butun, S.; Özbay, Ekmel (2006)
      The growth of high-performance Mg-doped p-type Al xGa 1-xN (x = 0.35) layers using low-pressure metal-organic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the ...
    • MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 

      Yu, H.; Ulker, E.; Özbay, Ekmel (Elsevier BV * North-Holland, 2006-04-01)
      We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type ...
    • MOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrate 

      Yu, H.; Ozturk, M.; Demirel, P.; Cakmak, H.; Özbay, Ekmel (Elsevier, 2010-11-15)
      Non-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane ...
    • De novo missense variants disrupting protein–protein interactions affect risk for autism through gene co-expression and protein networks in neuronal cell types 

      Chen, S.; Wang, J.; Çiçek, Ercüment; Roeder, K.; Yu, H.; Devlin, B. (BioMed Central, 2020)
      Background: Whole-exome sequencing studies have been useful for identifying genes that, when mutated, affect risk for autism spectrum disorder (ASD). Nonetheless, the association signal primarily arises from de novo ...
    • Structural and optical properties of an InxGa1-xN/GaN nanostructure 

      Korçak, S.; Öztürk, M. K.; Çörekçi, S.; Akaoğlu, B.; Yu, H.; Çakmak, M.; Sağlam, S.; Özçelik, S.; Özbay, Ekmel (Elsevier BV * North-Holland, 2007)
      The structural and optical properties of an InxGa1-xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence ...
    • A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition 

      Yu, H.; Ozturk, K. M.; Ozcelik, S.; Özbay, Ekmel (Elsevier BV * North-Holland, 2006)
      We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural ...