Now showing items 1-2 of 2

    • High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared 

      Okyay, Ali Kemal; Onbaşlı, M. Cengiz; Ercan, Burcu; Yu H.-Y.; Ren, S.; Miller, D.A.B.; Saraswat, K.C.; Nayfeh, A.M. (IEEE, 2009)
      Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap ...
    • High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration 

      Yu, H.-Y.; Ren, S.; Jung, W. S.; Okyay, Ali Kemal; Miller, D. A. B.; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2009)
      We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime ...