Now showing items 1-10 of 10

    • Digital Fourier optics 

      Özaktaş, Haldun M.; Miller, D. A. B. (Optical Society of America, 1996-03-10)
      Analog Fourier optical processing systems can perform important classes of signal processing operations in parallel, but suffer from limited accuracy. Digital–optical equivalents of such systems could be built that share ...
    • High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration 

      Yu, H.-Y.; Ren, S.; Jung, W. S.; Okyay, Ali Kemal; Miller, D. A. B.; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2009)
      We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime ...
    • Integrated photonic switches for nanosecond packet-switched optical wavelength conversion 

      Fidaner, O.; Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Harris, J. S.; Miller, D. A. B. (Optical Society of America, 2006)
      We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical ...
    • Intimate monolithic integration of chip-scale photonic circuits 

      Sabnis, V. A.; Demir, Hilmi Volkan; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B.; Li, N.; Wu, T.-C.; Chen, H.-T.; Houng, Y.-M. (IEEE, 2005)
      In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, ...
    • Limit to bit-rate capacity of electrical interconnects from aspect ratio of system architecture 

      Miller, D. A. B.; Özaktaş, Haldun M. (Academic Press, 1997-02-25)
      We show that there is a limit to the total number of bits per second,B, of information that can flow in a simple digital electrical interconnection that is set only by the ratio of the lengthlof the interconnection to the ...
    • Multifunctional integrated photonic switches 

      Demir, H. M.; Sabnis, V. A.; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B. (Institute of Electrical and Electronics Engineers, 2005)
      Traditional optical-electronic-optical (o-e-o) conversion in today’s optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and ...
    • Optoelectronic switches based on diffusive conduction 

      Demir, Hilmi Volkan; Koklu, H.; Yairi, M. B.; Harris, J. S.; Miller, D. A. B. (AIP Publishing LLC, 2006)
      We study the process of diffusive conduction that we use in our optoelectronic switches to achieve rapid optical switching (on a picosecond time scale). We present the characteristic Green's function of the diffusive ...
    • Scalable wavelength-converting crossbar switches 

      Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Fidaner, O.; Harris, J. S.; Miller, D. A. B. (IEEE, 2004-10)
      We report scalable low-power wavelength-converting Crossbar switches that monolithically integrate two-dimensional compact arrays of surface-normal photodiodes with quantum-well waveguide modulators. We demonstrate ...
    • Self-aligned via and trench for metal contact in III-V semiconductor devices 

      Zheng, J. F.; Demir, Hilmi Volkan; Sabnis, V.A.; Fidaner, O.; Harris, J.S.; Miller, D. A. B. (AIP Publishing LLC, 2006)
      A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices (in particular, on InP platform) is presented, together with fabrication results. As a template ...
    • Self-aligning planarization and passivation for integration applications in III-V semiconductor devices 

      Demir, Hilmi Volkan; Zheng, J.-F.; Sabnis, V. A.; Fidaner, O.; Hanberg, J.; Harris, J. S.; Miller, D. A. B. (IEEE, 2005)
      This paper reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage ...