Browsing by Author "Lisesivdin, S.B."
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Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
Bengi, A.; Lisesivdin, S.B.; Kasap, M.; Mammadov, T.; Ozcelik, S.; Özbay, Ekmel (2010)The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) ... -
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
Celik O.; Tiras, E.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Electrical conduction properties of Si δ-doped GaAs grown by MBE
Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ... -
The substrate temperature dependent electrical properties of titanium dioxide thin films
Yildiz, A.; Lisesivdin, S.B.; Kasap, M.; Mardare, D. (2010)Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2012)The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...